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| TPCP8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8402 Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications * Low drain-source ON resistance : P Channel RDS (ON) = 60 m (typ.) N Channel RDS (ON) = 38 m (typ.) High forward transfer admittance : P Channel |Yfs| = 6.0 S (typ.) N Channel |Yfs| = 7.0 S (typ.) Low leakage current : P Channel IDSS = -10 A (VDS = -30 V) N Channel IDSS = 10 A (VDS = 30 V) Enhancement-mode : P Channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) Unit: mm * * Note 7 5 6 7 8 Drain2 Drain2 Drain1 Drain1 * 1 2 3 4 Source1 Gate1 Source2 Gate2 Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg -30 -30 20 -3.4 -13.6 1.48 1.23 0.58 0.36 0.75 -1.7 0.12 150 -55~150 Rating 30 30 20 4.2 16.8 1.48 1.23 W 0.58 0.36 2.86 2.1 mJ A Unit V V V A JEDEC JEITA TOSHIBA Weight: 0.017 g (typ.) Circuit Configuration 8 7 6 5 Single-device operation (Note 3a) Single-device value at dual operation(Note 3b) Single-device operation (Note 3a) Single-device value at dual operation(Note 3b) Single pulse avalanche energy(Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range 1 2 3 4 Marking (Note 6) mJ C C 8 7 6 5 Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 8402 2 3 4 1 2003-09-26 TPCP8402 Thermal Characteristics Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 84.5 C/W 101.6 215.5 C/W 347.2 Unit Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) 25.4 (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) 25.4 (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: P Channel: VDD = -24 V, Tch = 25C (initial), L = 0.2 mH, RG = 25 , IAR = -1.7 A N Channel: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = 2.1 A Note 5: Repetitive rating; Pulse width limited by maximum channel temperature. Note 6: Black round marking " " locates on the left lower side of parts number marking "8402" indicates terminal No. 1. " " shows lot number, which is a three digit number. The first digit number expresses the year of manufacture: last decimel digit of the year of manufacture, the next two digit number expresses the week of manufacture. 2 2003-09-26 TPCP8402 P-ch Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 0V VGS - 10 V 4.7 ID = -1.7 A VOUT RL = 8.82 VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -30 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 20 V VDS = -10 V, ID = -1 mA VGS = -4.5 V, ID = -1.7 A VGS = -10 V, ID = -1.7 A VDS = -10 V, ID = -1.7 A Min -30 -15 -0.8 3.0 Typ. 80 60 6.0 600 60 70 5.3 12 8.4 34 14 1.4 2.7 Max 10 10 -2.0 105 72 ns nC pF Unit A A V V m S VDD -15 V - Duty < 1%, tw = 10 s = VDD - -24 V, VGS = -10 V, ID = -3.4 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = -3.4 A, VGS = 0 V Min Typ. Max -13.6 1.2 Unit A V 3 2003-09-26 TPCP8402 N-ch Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS Turn-on time Switching time Fall time tf toff Qg Qgs1 Qgd VDD 24 V, VGS = 10 V, ID = 6 A ton 4.7 10 V 0V ID = 2.1 A VOUT RL = 7.14 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 2.1 A VGS = 10 V, ID = 2.1 A VDS = 10 V, ID = 2.1 A Min 30 15 1.3 3.5 Typ. 58 38 7.0 470 60 80 5.2 Max 10 10 2.5 77 50 ns 4.0 nC pF Unit A A V V m S 8.3 VDD 15 V - Duty < 1%, tw = 10 s = 22 10 1.7 2.4 Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 4.2 A, VGS = 0 V Min Typ. Max 16.8 -1.2 Unit A V 4 2003-09-26 TPCP8402 7: 1 2 3 4 Source1 Gate1 Source2 Gate2 5 6 7 8 Drain2 Drain2 Drain1 Drain1 5 2003-09-26 TPCP8402 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2003-09-26 |
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